Product Description
LaAlO3 is a high temperature superconducting single crystal substrate. It is a good substrate material for epitaxial growth of high temperature superconducting thin films and giant magnetic thin films. Its dielectric properties are suitable for low loss microwave and dielectric resonance applications.
Main Advantages:
Small dielectric constant
Low dielectric loss
Good lattice matching
Small thermal expansion coefficient
Good chemical stability; wide energy gap
Large specific surface area
Good thermal stability
Typical applications:
High temperature superconducting thin film epitaxial substrate; Macro-magnetic thin film epitaxial substrate; Microwave amplification and dielectric resonance
Material Properties
| Chemical Formula | LaAlO3 |
| Growth Method | Czochralski |
| Crystal System | Hexagonal (room temperature) |
| Lattice Constant | Hexagonal a = 5.357Å c = 13.22 Å |
| Hardness | 6.5 Mohs |
| Density | 6.52g/cm3 |
| Melting Point | Melting Point |
| Thermal Expansion | 10×10-6/℃ |
| Loss Tangent (10ghz) | ～3×10-4@300K,～0.6×10-4@77K |
Technical Parameter
| Dimensions | Max Diameter 76.2mm（3 inch） |
| Thickness | 0.5mm other thickness available |
| Polishing | Single or double |
| Orientation | <100><110><111> |
| Ra | Ra≤5Å（5µm×5µm） |
| Orientation Tolerance | ±0.2° |
| Orientation Flat | 2°（within 1° for special requirement） |
| Angle of Crystalline | Special size and orientation are available upon request |
Note: Above parameters for reference only, please contact our sales Rep. for your specific requirement.
