Monocrystalline Silicon Wafer

TLF has similar transparency range to TGG. It should be noted that this material show improved absorption at the shorter wavelengths. Unlike TGG, color center formation and cation valence changes are minimized in the fluoride crystals resulting in a consistent “water-white” appearance. This is promising for optical isolators for visible wavelength lasers.

Ion Beam Figure Machine Tool is working by high beam density, small beam divergence angle and large beam uniformity High energy ion beam bombards the surface of optics, to achieve ultra-precision surface error. The generation of high-energy ions is based on high purity inert gas, passing through hollow cathode. The electrode generates ionization under the discharge of the power module and injects the electron beam into the cavity, and the electron beam is uniformly distributed into the anode area through the electron uniform plate under the action of the electric field and magnetic field of the anode. the electric field of the grid The output ion beam is controlled by the system to achieve uniform and stable surface removal of optical elements.

YIG has superior optical and microwave properties. In the field of optics, the Faraday effect of yttrium iron garnet can be used to manufacture mid-infrared isolators, laser modulators, fiber optic current sensors and other products; In the field of microwaves, YIG has high Q resonance characteristics, which can be used to manufacture magnetic resonance filters, tuned oscillators, bandpass filters and other products. Currently, YIG single crystals are mostly used among the wavelength of 2000-4000nm.

Base on phase-shifting technique, the laser interferometer, widely used in the high-precision measurement of planar and spherical optical components, characterizes the three-dimensional topography of the measured surface with a precision of 0.06 μm (Peak-to-valley) or higher.

Grown by Czochralski method
Diameter: up to 485mm
Dopant B (Borum)
Type of conductivity: P
Orientation: 100
Resistivity: up to 10000
Notch-yes Notch Location: 110
Notch size: 2,3 mm
shape of the Notch: V
Wafer thickness: 775±25 microns Type of marking: laser Marking location Reverse side Edge Profile: SEMI T/4 S1/S2 polishing- yes
Total thickness change across the wafers (TTV), microns < 3
WARP: <40 microns The number of particles on a surface larger
than 0.12 microns: <40
Surface content of Aluminum, E10AT/CM2: 5

Ce:GAGG is a relatively new single scintillation crystal with many properties, such as high light yield, high density, good energy resolution, good emission peak matching with silicon sensor and low intrinsic energy resolution. in addition, the material is non-hygroscopic and non-self-radiative. which is widely used in PET, PEM, SPECT, CT, X and Y ray detection and so on.