Solid state ultraviolet laser

The machine is used for the processing of high-precision thin sheet optical elements.

TSAG is the key isolator material of the next generation fiber laser. As an ideal visible and infrared magneto-optical crystal, TSAG has the advantages of high Verdet constant, excellent thermal and mechanical properties.

The Computer Control Optic Surfacing Polisher Basing on mini industrial robot,with less space and more flexibility. The surface error is figured by the polishing spindle tool, using for optical plane, spherical and aspheric surface. The fitting polishing tool technology basing on the polishing force controller was developed to get the controllable Influence Function and finish the precision optical surface. And High Mark will provide full process solutions from micron to nanometre with the innovative process technology and software.

Reflective lenses are made of K9/quartz.

Faraday rotator is based on the nonreciprocity of magneto-optical materials, that is, it can rotate the polarization planes of the normal incident light and the reverse incident light of the same wavelength to the same direction and the same angle, independent of the beam propagation direction. If a Faraday rotator with 45 degree rotation of the polarization plane of the incident beam is placed between a pair of polarizers orthogonal to each other to form an optical isolator, it only allows the forward propagating beam to pass through the system and blocks the backward propagating beam. Faraday rotator is an important component of optical isolator, which is widely used in various laser systems, such as multi-stage laser amplifier, optical parametric oscillator, ring laser, erbium-doped fiber amplifier, seed injection laser, optical switch, optical modulator and so on.

Base on phase-shifting technique, the laser interferometer, widely used in the high-precision measurement of planar and spherical optical components, characterizes the three-dimensional topography of the measured surface with a precision of 0.06 μm (Peak-to-valley) or higher.

Grown by Czochralski method
Diameter: up to 485mm
Dopant B (Borum)
Type of conductivity: P
Orientation: 100
Resistivity: up to 10000
Notch-yes Notch Location: 110
Notch size: 2,3 mm
shape of the Notch: V
Wafer thickness: 775±25 microns Type of marking: laser Marking location Reverse side Edge Profile: SEMI T/4 S1/S2 polishing- yes
Total thickness change across the wafers (TTV), microns < 3
WARP: <40 microns The number of particles on a surface larger
than 0.12 microns: <40
Surface content of Aluminum, E10AT/CM2: 5